کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
10669790 | 1008839 | 2012 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Valence band offset at GaN/β-Si3N4 and β-Si3N4/Si(111) heterojunctions formed by plasma-assisted molecular beam epitaxy
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله

چکیده انگلیسی
Ultra thin films of pure β-Si3N4 (0001) were grown on Si (111) surface by exposing the surface to radio- frequency nitrogen plasma with a high content of nitrogen atoms. Using β-Si3N4 layer as a buffer layer, GaN epilayers were grown on Si (111) substrate by plasma-assisted molecular beam epitaxy. The valence band offset (VBO) of GaN/β-Si3N4/Si heterojunctions is determined by X-ray photoemission spectroscopy. The VBO at the β-Si3N4 / Si interface was determined by valence-band photoelectron spectra to be 1.84 eV. The valence band of GaN is found to be 0.41 ± 0.05 eV below that of β-Si3N4 and a type-II heterojunction. The conduction band offset was deduced to be ~ 2.36 eV, and a change of the interface dipole of 1.29 eV was observed for GaN/β-Si3N4 interface formation.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 520, Issue 15, 31 May 2012, Pages 4911-4915
Journal: Thin Solid Films - Volume 520, Issue 15, 31 May 2012, Pages 4911-4915
نویسندگان
Mahesh Kumar, Basanta Roul, Thirumaleshwara N. Bhat, Mohana K. Rajpalke, A.T. Kalghatgi, S.B. Krupanidhi,