Photoelectrical characteristics of GaSb/GaInAsSb/GaAlAsSb heterojunction photodiodes under illumination by photons with wavelength of 0.95-1.0 μm

The photovoltaic characteristics of a type II staggered heterojunction in the GaSb/GaInAsSb/GaAlAsSb system were studied. The dark current and R0A product were investigated at different temperatures. The current-voltage characteristics of n-GaSb/n-GaInAsSb/p-GaAlAsSb heterostructures were investigated at room temperature in the photovoltaic mode under illumination by light with wavelength of 0.95-1.0 μm and different intensities. A short-circuit current and an open circuit voltage as a function of intensity of incident light in photovoltaic mode were studied.