Characterization and optoelectronic properties of sol-gel-derived CuFeO2 thin films

► CuFeO2 films were prepared by sol-gel processing followed a two-step annealing. ► Pure delafossite CuFeO2 films can be obtained above 650 °C. ► Electrical conductivity of the CuFeO2 film annealed at 700 °C is 0.36 S cm− 1.