One-step synthesis of Cu(In,Ga)Se2 absorber layers by magnetron sputtering from a single quaternary target

► One-step sputtering simplifies the fabrication of Cu(In,Ga)Se2 (CIGS) absorbers. ► Microstructure of CIGS films is tunable by merely adjusting sputtering parameters. ► High sputtering temperature, pressure, and RF power favor high quality CIGS film. ► Columnar CIGS film has expected stoichiometry and strong (220)/(204) orientation.