Spatially varied orientation selective epitaxial growth of CeO2(100) and (110) regions on Si(100) substrates by reactive magnetron sputtering utilizing electron beam irradiation

►Hybrid orientation structure of CeO2(100) and (110) areas is realized on Si(100). ► Electron beam induced orientation selective epitaxial growth is employed. ► Transition regions are found in between the two different orientation areas. ► The transition region width decreases with lowering resistivity of Si substrates.