Effect of layout arrangements on strained n-type metal-oxide-semiconductor field-effect transistors with silicon-carbon stressor

► 3D strain of n-channel field-effect transistors by source/drain SiC film stressors. ► Simulation methodology is validated by related experiments. ► Stress effect on gate length dependence is analyzed. ► Mobility gain of gate length dependence is calculated. ► Increasing the length of dummy active of diffusion will enhance device performance.