Electrical resistivity of Ti-Zn mixed oxide thin films deposited by atomic layer deposition

► Ti-Zn mixed oxide thin films are synthesized by atomic layer deposition (ALD). ► ALD is performed at low temperature (90 °C). ► Thin film composition is controlled by the amount of each metal oxide cycles. ► Sample crystallization is studied during annealing by in situ X-ray diffraction. ► Electrical resistivity of crystalline samples increase with Ti content.