Optoelectronic transport property measurements of an amorphous-silicon-passivated c-silicon wafer using non-contacting methodologies

► Characterization of Si wafer passivated with hydrogenated amorphous silicon films. ► Determination of free carrier transport parameters by PhotoCarrier Radiomentry (PCR). ► Detailed comparisons of PCR-derived lifetime values with conventional techniques. ► PCR method may be used for optoelectronic quality control of the α-Si/c-Si interface.