Comparative analysis of oxide phase formation and its effects on electrical properties of SiO2/InSb metal-oxide-semiconductor structures

►We report the quantitative analysis of interfacial oxides at the SiO2/InSb interface. ►Interfacial oxides were measured quantitatively by X-ray Photoelectron Spectroscopy. ►As-grown and annealed samples showed different compositions of oxide phases. ►Considerable reduction of antimony oxide phases was observed during annealing. ►Interface trap densities at the SiO2/InSb interface were calculated.