Growth and characterization of germanium epitaxial film on silicon (001) using reduced pressure chemical vapor deposition

►Ge films grown in reduced pressure chemical vapor deposition. ►High quality Ge obtained using a “three-step growth” approach. ►Anneal in H2 reduced threading dislocation density and surface roughness. ►Annealing time impacts the surface morphology of the Ge epitaxial film. ►Further improvement in surface roughness through chemical mechanical polishing.