کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
10670134 | 1008853 | 2011 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Low-temperature atomic layer deposition of ZnO thin films: Control of crystallinity and orientation
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Low-temperature atomic layer deposition of ZnO thin films: Control of crystallinity and orientation Low-temperature atomic layer deposition of ZnO thin films: Control of crystallinity and orientation](/preview/png/10670134.png)
چکیده انگلیسی
Low-temperature atomic layer deposition (ALD) processes are intensely looked for to extend the usability of the technique to applications where sensitive substrates such as polymers or biological materials need to be coated by high-quality thin films. A preferred film orientation, on the other hand, is often required to enhance the desired film properties. Here we demonstrate that smooth, crystalline ZnO thin films can be deposited from diethylzinc and water by ALD even at room temperature. The depositions were carried out on Si(100) substrates in the temperature range from 23 to 140 °C. Highly c-axis-oriented films were realized at temperatures below ~ 80 °C. The film crystallinity could be further enhanced by post-deposition annealing under O2 or N2 atmosphere at 400-600 °C while keeping the original film orientation intact.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 519, Issue 16, 1 June 2011, Pages 5319-5322
Journal: Thin Solid Films - Volume 519, Issue 16, 1 June 2011, Pages 5319-5322
نویسندگان
Jari Malm, Elina Sahramo, Juho Perälä, Timo Sajavaara, Maarit Karppinen,