کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
10670137 | 1008853 | 2011 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Formation of CuIn1 â xAlxSe2 thin films studied by Raman scattering
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
CuIn1 â xAlxSe2 (CIAS) thin films (x = 0.06, 0.18, 0.39, 0.64, 0.80 and 1) with thicknesses of approximately 1 μm were formed by the selenization of sputtered CuâInâAl precursors and studied via X-ray diffraction, inductively coupled plasma mass spectrometry and micro-Raman spectroscopy at room temperature. Precursor films selenized at 300, 350, 400, 450, 500 and 550 °C were examined via Raman spectroscopy in the range 50-500 cmâ 1 with resolution of 0.3 cmâ 1. Sequential formation of InxSey, Cu2 â xSe, CuInSe2 (CIS) and CIAS phases was observed as the selenization temperature was increased. Conversion of CIS to CIAS was initiated at 500 °C. For all CuIn1 â xAlxSe2 products, the A1 phonon frequency varied nonlinearly with respect to the aluminum composition parameter x in the range 172 cmâ 1 to 186 cmâ 1.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 519, Issue 16, 1 June 2011, Pages 5329-5334
Journal: Thin Solid Films - Volume 519, Issue 16, 1 June 2011, Pages 5329-5334
نویسندگان
J. OlejnÃÄek, C.A. Kamler, S.A. Darveau, C.L. Exstrom, L.E. Slaymaker, A.R. Vandeventer, N.J. Ianno, R.J. Soukup,