کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
10670226 1008853 2011 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Direct writing of semiconducting polythiophene and fullerene derivatives composite from bulk heterojunction solar cell by inkjet printing
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
Direct writing of semiconducting polythiophene and fullerene derivatives composite from bulk heterojunction solar cell by inkjet printing
چکیده انگلیسی
The direct writing approach of poly(3-hexylthiophene):[6,6]-phenyl-C61-butyric acid methyl ester (P3HT:PCBM) composite from bulk-heterojunction (BHJ) solar cell was efficiently addressed by inkjet printing technology using conventional chlorobenzene ink solution. The structure of inkjet-printed P3TH:PCBM BHJ film was fabricated by the repetitive direct writing of new line overlapped partially on former line. The best structure of P3HT:PCBM film for BHJ solar cell was observed from inkjet printing condition of around 50% of droplet overlaps with 2 wt.% BHJ ink at 25 °C of substrate temperature. The maximum power conversion efficiency reached 2.83% with an open circuit voltage of 0.62 V, a short circuit current density of 8.60 mA/cm2, and a fill factor of 0.53 under air mass 1.5 G irradiation (100 mW/cm2).
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 519, Issue 16, 1 June 2011, Pages 5649-5653
نویسندگان
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