UV photoconductivity characteristics of ZnO nanowire field effect transistor treated by proton irradiation

► Investigation on UV photoconductivity of ZnO nanowire field effect transistors. ► High-energy proton irradiation produces interface traps in a dielectric layer. ► Holes trapped in interface traps hinder the recombination of electron-hole pairs. ► Interface traps play a role in the increase in photocurrent decay time.