Characterizations and thermal stability improvement of phase-change memory device containing Ce-doped GeSbTe films

► Ce doping increased phase-change temperature of GST from 159 to 236 °C. ► No suppression of resistivity level in amorphous Ce-doped GST. ► Resistance ratio of amorphous and crystalline Ce-doped GST was preserved at 105. ► p-type semiconducting behavior of GST was enhanced by Ce-doping. ► Ce-doping improved the thermal stability of threshold voltage of GST PCM device.