کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
10670388 | 1008866 | 2011 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Real time spectroscopic ellipsometry of Ag/ZnO and Al/ZnO interfaces for back-reflectors in thin film Si:H photovoltaics
دانلود مقاله + سفارش ترجمه
دانلود مقاله ISI انگلیسی
رایگان برای ایرانیان
کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Real time spectroscopic ellipsometry of Ag/ZnO and Al/ZnO interfaces for back-reflectors in thin film Si:H photovoltaics Real time spectroscopic ellipsometry of Ag/ZnO and Al/ZnO interfaces for back-reflectors in thin film Si:H photovoltaics](/preview/png/10670388.png)
چکیده انگلیسی
Real time spectroscopic ellipsometry (RTSE) has been applied to analyze the optical characteristics of Ag/ZnO and Al/ZnO interfaces used in back-reflector (BR) structures for thin film silicon photovoltaics. The structures explored here are relevant to the substrate/BR/Si:H(n-i-p) solar cell configuration and consist of opaque Ag or Al films having controllable thicknesses of microscopic surface roughness, followed by a ZnO layer up to ~Â 3000Â Ã
thick. The thicknesses of the final surface roughness layers on both Ag and Al have been varied by adjusting magnetron sputtering conditions in order to study the effects of metal film roughness on interface formation and interface optical properties. The primary interface loss mechanisms in reflection are found to be dissipation via absorption through localized plasmon modes for Ag/ZnO and through intraband and interband transitions intrinsic to metallic Al for Al/ZnO.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 519, Issue 9, 28 February 2011, Pages 2682-2687
Journal: Thin Solid Films - Volume 519, Issue 9, 28 February 2011, Pages 2682-2687
نویسندگان
Lila Raj Dahal, Deepak Sainju, N.J. Podraza, S. Marsillac, R.W. Collins,