کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
10670633 | 1008976 | 2005 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
A statistical parameter study of indium tin oxide thin films deposited by radio-frequency sputtering
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
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چکیده انگلیسی
In order to optimize the electrical and optical properties of indium tin oxide (ITO) thin films, a statistical analysis called Taguchi design was employed. It is shown that the sheet resistance and transmittance are inversely proportional to each other as a function of the process parameters. Additionally, the preferred orientation of crystalline ITO film is distinguishably changed with the increase of sputtering temperature and oxygen fraction (O2/O2+Ar) in the sputtering ambient. The change in crystallinity results from the content of incorporated oxygen, which significantly affects the electrical and optical properties of ITO films and causes a rearrangement of atoms to form preferred closed-packed plane orientation. Finally, the microstructure of the ITO films becomes denser with the increasing oxygen fraction. As a result of this work, we have successfully achieved low sheet resistance (7.0 Ω/â¡) and high transmittance (~90%) for 300 nm thick films.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 476, Issue 1, 1 April 2005, Pages 59-64
Journal: Thin Solid Films - Volume 476, Issue 1, 1 April 2005, Pages 59-64
نویسندگان
Seung-Ik Jun, Timothy E. McKnight, Michael L. Simpson, Philip D. Rack,