Co3O4 protective coatings prepared by Pulsed Injection Metal Organic Chemical Vapour Deposition

Cobalt oxide films were grown by Pulsed Injection Metal Organic Chemical Vapour Deposition (PI-MOCVD) using Co(acac)3 (acac=acetylacetonate) precursor dissolved in toluene. The structure, morphology and growth rate of the layers deposited on silicon substrates were studied as a function of deposition temperature. Pure Co3O4 spinel structure was found for deposition temperatures ranging from 360 to 540 °C. The optimum experimental parameters to prepare dense layers with a high growth rate were determined and used to prepare corrosion protective coatings for Fe-22Cr metallic interconnects, to be used in Intermediate Temperature Solid Oxide Fuel Cells.