کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
10671039 | 1009031 | 2005 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Study of the conduction properties of silicon-rich oxide under illumination
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
Carrier transport in silicon-rich oxide (SRO) was studied under illumination using the standard current versus voltage and capacitance versus voltage measurements. Al/SRO/Si metal-oxide-semiconductor (MOS)-like structures were used, and SRO layers with different thickness and excess Si concentration were deposited by low-pressure chemical vapor deposition (CVD) technique. In reverse bias condition, two conduction regimes were observed. The photocurrent in low-voltage regime is limited by the transport mechanism of carriers; while in the high-voltage regime, it is limited by the density of photogenerated carriers. The Poole-Frenkel conduction mechanism was found to dominate the carrier transport in SRO under illumination. It was also demonstrated that high photosensitivity was achieved in this structure that is a potential visible optical sensor.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 473, Issue 1, 1 February 2005, Pages 145-150
Journal: Thin Solid Films - Volume 473, Issue 1, 1 February 2005, Pages 145-150
نویسندگان
Zhenrui Yu, Mariano Aceves-Mijares,