کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
11001687 | 1009310 | 2018 | 18 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Halide vapor phase epitaxy of Si doped β-Ga2O3 and its electrical properties
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Halide vapor phase epitaxy of Si doped β-Ga2O3 and its electrical properties Halide vapor phase epitaxy of Si doped β-Ga2O3 and its electrical properties](/preview/png/11001687.png)
چکیده انگلیسی
Silicon doped homoepitaxial films were grown on betaâgallium oxide (001) substrates by halide vapor phase epitaxy using gallium monochloride, oxygen and silicon tetrachloride gases as precursors. It was confirmed that the n-type carrier density at room temperature was almost equal to the doped silicon concentration, which was controlled in the range of 1015 to 1018â¯cmâ3. In the doped film with the carrier density of 1â¯Ãâ¯1016â¯cmâ3, the activation energy and the mobility at room temperature were 45.6â¯meV and 145â¯cm2/Vâ
s, respectively. The carrier scattering mechanism in the low carrier density film was dominated by optical phonon scattering with the phonon energy of 33â¯meV. These results suggest that the doped homoepitaxial film grown by halide vapor phase epitaxy is a high quality film with good crystallinity comparable to bulk crystals.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 666, 30 November 2018, Pages 182-184
Journal: Thin Solid Films - Volume 666, 30 November 2018, Pages 182-184
نویسندگان
Ken Goto, Keita Konishi, Hisashi Murakami, Yoshinao Kumagai, Bo Monemar, Masataka Higashiwaki, Akito Kuramata, Shigenobu Yamakoshi,