کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1246170 | 969746 | 2007 | 4 صفحه PDF | دانلود رایگان |
Recently, for sensor application, porous silicon has received a great deal of attention due to the high specific surface area and the easy fabrication using some established processes of the usual silicon technology. We herein, report the development of a novel immunosensors based on porous silicon for antigen detection. The multilayer immunosensor structure was fabricated following the successive steps: APTS self-assembled monolayer (SAM) layer, glutaaldehyde linker, anti-rabbit IgG binding. The insulating properties of the aminopropyl-triethoxysilane (APTS) monolayer were studied with cyclic voltammetry and the molecular structure was characterized with Fourier-transform infrared (FTIR) technique. The binding between antibody and different antigen concentration (rabbit IgG) was monitored by measuring the capacitance–voltage curve of the antibody functionalized EIS structure. A detection limit of 10 ng/ml of antigen can be detected.
Journal: Talanta - Volume 71, Issue 3, 28 February 2007, Pages 1430–1433