کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1547212 | 1512908 | 2007 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Growth of InN films and nanorods by H-MOVPE
دانلود مقاله + سفارش ترجمه
دانلود مقاله ISI انگلیسی
رایگان برای ایرانیان
کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
InN films and nanorods were grown by hydride metalorganic vapor phase epitaxy (H-MOVPE) and the effects of growth temperature, and NH3/TMIn and HCl/TMIn ratios on morphological dependences were studied. The growth habit of InN varied from thin film to microrod to nanorod to no deposition as the growth conditions were changed about transition from growth to etching conditions. The growth and etch regimes were also predicted by chemical equilibrium calculations of In–C–H–Cl–N-inert system. The optical properties of InN nanorods and columnar structured films were measured by room temperature PL and a maximum intensity was observed at 1.08 eV for both structures.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Physica E: Low-dimensional Systems and Nanostructures - Volume 37, Issues 1–2, March 2007, Pages 142–147
Journal: Physica E: Low-dimensional Systems and Nanostructures - Volume 37, Issues 1–2, March 2007, Pages 142–147
نویسندگان
Hyun Jong Park, Olga Kryliouk, Tim Anderson, Dmitry Khokhlov, Timur Burbaev,