کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1547256 | 997631 | 2006 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Study of nucleation positions of InAs islands on stripe-patterned GaAs (1 0 0) substrate
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
By combination of prepatterned substrate and self-organized growth, InAs islands are grown on the stripe-patterned GaAs (1 0 0) substrate by solid source molecular beam epitaxy. Four [011¯] stripe-patterned substrates different in pitch, depth, and sidewall angle, respectively, are used in this work. The surface morphology obtained by atomic force microscopy shows that the InAs quantum dots can be formed either on the ridge or on the sidewall of the stripes near the bottom, depending on the structure of the stripes on the patterned substrate. The mechanism determining the nucleation position of the InAs dots is discussed. The optical properties of the InAs dots on the patterned substrates are also investigated by photoluminescence.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Physica E: Low-dimensional Systems and Nanostructures - Volume 31, Issue 1, January 2006, Pages 43–47
Journal: Physica E: Low-dimensional Systems and Nanostructures - Volume 31, Issue 1, January 2006, Pages 43–47
نویسندگان
C.X. Cui, Y.H. Chen, P. Jin, B. Xu, Y.Y. Ren, C. Zhao, Z.G. Wang,