کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1547522 1512909 2006 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
The microwave induced resistance response of a high mobility 2DEG from the quasi-classical limit to the quantum Hall regime
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله
The microwave induced resistance response of a high mobility 2DEG from the quasi-classical limit to the quantum Hall regime
چکیده انگلیسی
Microwave induced resistance oscillations (MIROs) were studied experimentally over a very wide range of frequencies ranging from ∼20 GHz up to ∼4 THz, and from the quasi-classical regime to the quantum Hall effect regime. At low frequencies regular MIROs were observed, with a periodicity determined by the ratio of the microwave to cyclotron frequencies. For frequencies below 150 GHz the magnetic field dependence of MIROs waveform is well described by a simplified version of an existing theoretical model, where the damping is controlled by the width of the Landau levels. In the THz frequency range MIROs vanish and only pronounced resistance changes are observed at the cyclotron resonance. The evolution of MIROs with frequency is presented and discussed.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Physica E: Low-dimensional Systems and Nanostructures - Volume 34, Issues 1–2, August 2006, Pages 73-76
نویسندگان
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