کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1547963 | 1512910 | 2006 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Studies of electro-optical properties and band alignment of InGaPN/GaAs heterostructures by photoreflectance and photoluminescence
دانلود مقاله + سفارش ترجمه
دانلود مقاله ISI انگلیسی
رایگان برای ایرانیان
کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Studies of electro-optical properties and band alignment of InGaPN/GaAs heterostructures by photoreflectance and photoluminescence Studies of electro-optical properties and band alignment of InGaPN/GaAs heterostructures by photoreflectance and photoluminescence](/preview/png/1547963.png)
چکیده انگلیسی
Photoreflectance (PR) and photoluminescence (PL) spectra are measured for a series of In0.54Ga0.46P1âyNy/GaAs heterostructures at temperatures ranging from 25 to 300Â K. The redshifts of the PR and PL peaks indicate that the band gap of InGaPN is dramatically reduced as nitrogen is incorporated. The transition energies of the band edge at various temperatures are measured and least-squares fitted to the Varshni equation. With N incorporation, the PL peak energy exhibits a particular behavior with temperature, which is not observed in PR spectra. This is attributed to carrier localization at low temperatures resulting from N clusters in the samples. In addition, the emergence of additional peaks in PR spectra as N is incorporated implies that the band alignment switches from type I to type II, due to the lowering of the conduction band, thus forming a two-dimensional electron gas (2DEG) in the interface region between InGaPN and GaAs. The number of confined levels in the 2DEG is found to increase with N concentrations.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Physica E: Low-dimensional Systems and Nanostructures - Volume 32, Issues 1â2, May 2006, Pages 211-214
Journal: Physica E: Low-dimensional Systems and Nanostructures - Volume 32, Issues 1â2, May 2006, Pages 211-214
نویسندگان
K.I. Lin, K.C. Chen, T.S. Wang, Y.T. Lu, J.S. Hwang,