کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1552961 | 1513215 | 2015 | 11 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Exciton binding energy in an infinite potential semiconductor quantum well-wire heterostructure
ترجمه فارسی عنوان
انرژی اتصال دهنده اکسیتون در یک ساختار نانومتری کوانتومی نیمه هادی بی نهایت بالقوه
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
مواد الکترونیکی، نوری و مغناطیسی
چکیده انگلیسی
An interacting electron-hole pair in a quantum well-wire is studied within the framework of the effective-mass approximation. An expansion to a 1 dimensional, quantum well model is presented to include another confinement dimension for a quasi-2 dimensional, quasi-1 dimensional quantum well-wire heterostructure. The technique is applied to an infinite well-wire confining potential. The envelope function approximation is employed in the approach, involving a three parameter variational calculation in which the symmetry of the component of the wave function representing the relative motion is allowed to vary from the one- to the two- and three-dimensional limits. Results to such a numerical calculation are presented. Quantitative comparisons with previous calculations for quantum wells is made (in the wire limit where Lz â â) to find a good agreement between finite and infinite potential models up to a size of 100 Ã
.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Superlattices and Microstructures - Volume 86, October 2015, Pages 456-466
Journal: Superlattices and Microstructures - Volume 86, October 2015, Pages 456-466
نویسندگان
Richard Harris, Jacobus Terblans, Hendrik Swart,