کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1554423 998785 2008 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Effects of hydrostatic pressure on the Coulomb-bound states in GaAs-Ga1−xAlxAs semiconductor superlattices
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله
Effects of hydrostatic pressure on the Coulomb-bound states in GaAs-Ga1−xAlxAs semiconductor superlattices
چکیده انگلیسی
The effects of hydrostatic pressure on the Coulomb-bound states in GaAs-Ga1−xAlxAs and GaAs-AlAs semiconductor superlattices are theoretically studied. Calculations of the impurity binding energies for different configurations of the system and for various values of the hydrostatic pressure are performed in the framework of the parabolic-band and effective-mass schemes, and within the variational procedure. The hydrostatic-pressure dependence on the exciton energy is also obtained, and theoretical results are compared and found in good agreement with available experimental measurements.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Superlattices and Microstructures - Volume 44, Issue 6, December 2008, Pages 809-813
نویسندگان
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