کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1554469 | 998789 | 2010 | 9 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
An analysis of the effect of nitrogen and a screened (by free carriers) Coulomb field on the binding energy of hydrogenic shallow donors in GaInAsN
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
The effect of nitrogen concentration on the screening with free carriers and binding energy of hydrogenic shallow donors in GaInAsN alloys is investigated. The binding energy is calculated using a novel algebraic model which was proposed recently by Gönül et al. (2006) [16], in order to find an analytical solution to the screened Coulomb potential. The results show that the nitrogen concentration is a strong factor in producing a screening field of free carriers and in affecting the binding energy of hydrogenic shallow donors.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Superlattices and Microstructures - Volume 47, Issue 6, June 2010, Pages 676–684
Journal: Superlattices and Microstructures - Volume 47, Issue 6, June 2010, Pages 676–684
نویسندگان
Koray Köksal, Beşire Gönül,