کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1554490 | 998790 | 2010 | 14 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Design, fabrication and characterization of a Schottky diode on an AlGaAs/GaAs HEMT structure for on-chip RF power detection
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Design, fabrication and characterization of a Schottky diode on an AlGaAs/GaAs HEMT structure for on-chip RF power detection Design, fabrication and characterization of a Schottky diode on an AlGaAs/GaAs HEMT structure for on-chip RF power detection](/preview/png/1554490.png)
چکیده انگلیسی
A Schottky diode was designed and fabricated on an n-AlGaAs/GaAs high electron mobility transistor (HEMT) structure for RF power detection. The processing steps used in the fabrication were the conventional steps used in standard GaAs processing. Current-voltage measurements showed that the devices had rectifying properties with a barrier height of 0.5289-0.5468 eV. The fabricated Schottky diodes detected RF signals well and their cut-off frequencies up to 20 GHz were estimated in direct injection experiments. To achieve a high cut-off frequency, a smaller Schottky contact area is required. The feasibility of direct integration with the planar dipole antenna via a coplanar waveguide transmission line without insertion of matching circuits was discussed. A higher cut-off frequency can also be achieved by reducing the length of the coplanar waveguide transmission line. These preliminary results represent a breakthrough as regards direct on-chip integration technology, towards the realization of a ubiquitous network society.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Superlattices and Microstructures - Volume 47, Issue 2, February 2010, Pages 274-287
Journal: Superlattices and Microstructures - Volume 47, Issue 2, February 2010, Pages 274-287
نویسندگان
Farahiyah Mustafa, Norfarariyanti Parimon, Abdul Manaf Hashim, Shaharin Fadzli Abd Rahman, Abdul Rahim Abdul Rahman, Mohd Nizam Osman,