Properties of orientation-patterned GaAs crystals studied by cathodoluminescence spectroscopy

Orientation-patterned GaAs crystals fabricated by periodically reversing the crystal orientation of the GaAs domains have been studied by cathodoluminescence. The main properties concerning the differences between the two domain orientations, 〈001〉/〈001̄〉, and the walls between the domains have been studied. The CL study reveals that the domain walls are decorated with defects, and the antibonds, As-As and Ga-Ga, are partially inhibited by other point defects. The local strain around the domain walls was mapped, showing non-uniform distribution, probably related to the distribution of point defects around the domain walls.