Cathodoluminescence mapping and spectroscopy of Te-doped InxGa1−xSb grown by the vertical Bridgman method under an alternating magnetic field

Cathodoluminescence (CL) in the scanning electron microscope and wavelength dispersive X-ray microanalysis (WDX) have been used to assess the homogeneity of a whole Te-doped InxGa1−xSb ingot grown by the vertical Bridgman method under an alternating magnetic field. In particular, WDX has been used to determine the chemical composition of the ingot along the growth axis and several radial directions, while CL has been used to investigate the effective incorporation of In into the alloy, the nature and distribution of extended defects influencing the luminescence of the material and the shape evolution of the growth interfaces along the growth axis. CL spectroscopy reveals that doping with Te influences the band gap energy of this ternary compound through the Moss–Burstein effect.