کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1555063 998826 2006 8 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Selective growth of InAs islands on patterned GaAs (100) substrate
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله
Selective growth of InAs islands on patterned GaAs (100) substrate
چکیده انگلیسی
By a combination of prepatterned substrate and self-organized growth, InAs islands are grown on the stripe-patterned GaAs (100) substrate by solid-source molecular beam epitaxy. It is found that the InAs quantum dots can be formed either on the ridge or on the sidewall of the stripes near the bottom, depending on the structure of the stripes on the patterned substrate or molecular beam epitaxy growth conditions. When a InxGa1−xAs strained layer is grown first before InAs deposition, almost all the InAs quantum dots are deposited at the edges of the top ridge. And when the InAs deposition amount is larger, a quasi-quantum wire structure is found. The optical properties of the InAs dots on the patterned substrate are also investigated by photoluminescence.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Superlattices and Microstructures - Volume 39, Issue 5, May 2006, Pages 446-453
نویسندگان
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