High-quality InAlN/GaN heterostructures grown by metal-organic vapor phase epitaxy

We fabricated high-quality InAlN/GaN heterostructures by metal-organic vapor phase epitaxy (MOVPE). X-ray diffraction measurements revealed that InAlN/GaN heterostructures grown under optimal conditions have flat surfaces and abrupt heterointerfaces. Electron mobility from 1200 to 2000 cm2/V s was obtained at room temperature. To our knowledge, this mobility is the highest ever reported for InAlN/GaN heterostructures. We also investigated the relationship between the Al composition and sheet electron density (Ns) for the first time. Ns increased from 1.0×1012 to 2.7×1013 cm−2 when the Al composition increased from 0.78 to 0.89.