کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1555228 | 1513257 | 2006 | 4 صفحه PDF | دانلود رایگان |

This paper shows the selective etching process of an AlInN sacrificial layer, lattice-matched to GaN, on N-face (0001̄) GaN by an aqueous solution of 1,2-diaminoethane. Using the wavelength dispersive X-ray (WDX) spectrometers on an electron probe micro-analyser, together with an optical spectrometer and silicon CCD array added to the light microscope, and sharing the same focus as the electron microscope, cathodoluminescence spectra are collected from exactly the same spot as sampled by the WDX spectrometers. This technique allows the compositional properties of the etched AlInN layer and the optical properties of the semiconductor layers underlying the sacrificial layer to be scrutinised, verifying the etching selectivity and the efficiency of the process.
Journal: Superlattices and Microstructures - Volume 40, Issues 4–6, October–December 2006, Pages 369–372