کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1663798 | 1517996 | 2016 | 8 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Nonstoichiometry problems of ZnSe: From single crystals to nanofilms
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
Selenium nonstoichiometry in ZnSe under bivariant and monovariant equilibriums was studied by a direct physical-chemical method. ZnSe single crystals grown from the melt and the vapor phase were used as starting materials. It was found out that at TÂ >Â 720Â K, overstoichiometric Se generates mainly electrically neutral defects. ZnSe thin films (50-300Â nm) were prepared by vacuum thermal sputtering on “cold” glass substrates. To control the nonstoichiometry of the films, a specially designed two-chamber evaporator was used. The nonstoichiometry, electrical properties and morphology of the ZnSe films were investigated under various preparation conditions. It was demonstrated that it is possible to form p-n junction by varying the nonstoichiometry of ZnSe nanofilms.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 613, 31 August 2016, Pages 11-18
Journal: Thin Solid Films - Volume 613, 31 August 2016, Pages 11-18
نویسندگان
Igor Avetissov, Tran Khanh, Rasim Saifutyarov, Elena Mozhevitina, Andrew Khomyakov, Roman Avetisov, Albert Davydov, Sergei Neustroev, Nikolai Zhavoronkov,