کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1663820 | 1517995 | 2016 | 9 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Prediction of recrystallization times in electroplated copper thin films
ترجمه فارسی عنوان
پیش بینی زمان های بازسازی در فیلم های نازک مس
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
چکیده انگلیسی
Room temperature recrystallization responses of blanket electroplated Cu thin films deposited under various conditions were monitored in real-time using synchrotron X-ray diffraction. Nominal control of electroplating parameters such as plating current, bath chemistry, and plating time was found to be insufficient to ensure repeatability of the 50% recrystallization time, Ï50, from sample to sample even though the thickness variations between samples were insignificant. Real-time X-ray analysis of samples from numerous electroplating baths showed that, for a given seed deposition process, a reliable estimation of Ï50 at room temperature can be obtained from the ratio of the integrated intensities of the 111 and 200 Cu reflections, Iâ111/Iâ200, of the electroplated film at time zero (immediately after plating). Among the plating parameters investigated seed-layer texture most influenced this ratio and, hence, the subsequent room temperature recrystallization behavior of the plated film.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 615, 30 September 2016, Pages 107-115
Journal: Thin Solid Films - Volume 615, 30 September 2016, Pages 107-115
نویسندگان
Mikhail Treger, Christian Witt, Cyril Jr., Conal Murray, Jean Jordan-Sweet, Robert Rosenberg, Eric Eisenbraun, I.C. Noyan,