کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1663823 | 1517995 | 2016 | 7 صفحه PDF | دانلود رایگان |
• In situ HRTEM unveils the crystallization mechanism of highly hydrogenated a-Ge.
• Diffusion of H induces coarsening of nanovoids to nanopores before crystallization.
• Nanocrystallized porous Ge results after full crystallization of hydrogenated a-Ge.
• Conversely, crystallization of pure a-Ge produces large grained polycrystalline Ge.
The thermal crystallization of heavily hydrogenated, amorphous Ge (a-Ge:H) and ultra-pure amorphous Ge (a-Ge) thin films was investigated, on a comparative basis, by X-ray diffraction and high-resolution transmission electron microscopy (HRTEM) performed during in situ heating. It was found that the crystallization process in a-Ge:H is pronouncedly retarded, due to the initial presence of hydrogen-induced nanovoids. The crystallization of a-Ge:H initiates only after considerable reduction of the amount of nanovoids in the amorphous matrix by thermally induced coarsening of the nanovoids leading to nanopores in the a-Ge:H. Such retarded crystallization leads to the formation of nanocrystalline, porous Ge with nanocrystal sizes below 20 nm, in contrast with the fast formation of very large-grained (grain sizes of hundreds of nanometer) polycrystalline Ge upon thermal crystallization of pure a-Ge.
Journal: Thin Solid Films - Volume 615, 30 September 2016, Pages 145–151