Electrical and optical properties of Cu-Cr-O thin films fabricated by chemical vapour deposition

We present electrical and optical properties of CuCrO2 thin films deposited by chemical vapour deposition, as well as the influence of depositions' parameters on these properties. Oxygen partial pressure and precursor's concentrations have the greatest influence on optical and electrical properties of the films. Values of conductivities ranging from 10− 4 to 10 S/cm were obtained using different deposition conditions. The conductivity is thermally activated with an activation energy ranging from 57 to 283 meV. Thermoelectric measurements confirm the p-type conduction, and demonstrate high carrier concentration typical for a degenerate semiconductor. The as-deposited films show a medium degree of crystallinity, a maximum optical transmission up to 80% in the visible range with a corresponding band gap around 3.2 eV.