ZnO film deposition by DC magnetron sputtering: Effect of target configuration on the film properties

• Change of target configuration for optimization of magnetron sputtering deposition is proposed.
• Improvement of ZnO film properties due to use of this target is demonstrated.
• This configuration provided reproducibility of the deposited films properties.

Ballistic transport model for target-to-substrate atom transfer during magnetron sputter deposition was used to develop zinc target (cathode) configuration that enabled growth of uniform zinc oxide films on extensive surfaces and provided reproducibility of films characteristics irrespective of the cathode wear-out. The advantage of the developed target configuration for high-quality ZnO film deposition was observed in the sputtering pressure range of 5− 50 mTorr, and in the range of cathode-to-substrate distances 7–20 cm. Characteristics of the deposited films were demonstrated by using X-ray diffraction analysis, as well as optical and electrical measurements.