Current conduction mechanisms through Au/SnO/n-type Si/In devices

• We made and investigated the Au/p-type SnO/n-Si/In Schottky diodes.
• The gate (substrate) injection is verified by Schottky (Poole–Frenkel) emission.
• The intermedia SnSixOy strongly affects the SnO/n-Si Schottky diode's properties.

Current conduction mechanisms through Au/SnO/n-type Si/In devices were investigated. The electrical characteristics suggest that the injection behavior is governed by Schottky (Poole–Frenkel) emission for gate (substrate) injection. This injection is strong correlated with the interfacial property of devices. The discrepancy of SnO permittivity extracted respectively from Schottky and Poole–Frenkel emissions is observed and owing to the formation of intermediate SnSixOy layer.