کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1664120 1518004 2016 7 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Photoluminescence of ZnO thin films deposited at various substrate temperatures
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
Photoluminescence of ZnO thin films deposited at various substrate temperatures
چکیده انگلیسی


• The ZnO/Si SAW devices exhibit the Rayleigh and Sezawa modes.
• The crystalline of ZnO affects the EHP recombination and generation.
• The PL spectrum of ZnO shows Gaussian fitting distributions.
• The CTDUV is influenced by SAW types and ZnO film characteristics.

This study investigated surface acoustic wave devices with an Al/ZnO/Si structure for use in ultraviolet sensors. ZnO thin films were fabricated using a reactive radio frequency magnetron sputtering system. The substrate temperature of ZnO thin films can be varied to obtain highly crystalline properties. The surface morphologies and c-axis preferred orientation of the ZnO thin films were determined using scanning electron microscopy and X-ray diffraction. In addition, bright-field images of ZnO crystallization were investigated using a transmission electron microscope. From photoluminescence analysis, four peaks were obtained at 377.8, 384.9, 391.4, and 403.4 nm. Interdigital transducers of an aluminum electrode were fabricated on the ZnO/Si structure by using a direct current sputtering system and photolithography, combined with the lift-off method, thereby obtaining a surface acoustic wave device. Finally, frequency responses were measured using a network analyzer, and an illuminating test was adopted for the ultraviolet sensor, using a wavelength of 355 nm from a light-emitting diode. The sensitivities of the ultraviolet sensor were also discussed.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 605, 30 April 2016, Pages 77–83
نویسندگان
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