کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1664134 1518004 2016 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Residual stress and texture in Aluminum doped Zinc Oxide layers deposited by reactive radio frequency magnetron sputtering
ترجمه فارسی عنوان
تنش پسماند و بافت در لایه های اکسید روی آلومینیوم doped deposited توسط پرتاب مگنترون فرکانس رادیویی
کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد فناوری نانو (نانو تکنولوژی)
چکیده انگلیسی


• Al doped ZnO thin films were obtained by reactive radio frequency magnetron sputtering.
• Correlation of stresses and texture with electrical and optical properties is shown.
• Homogeneous and stress-free thin-films are the best performing ones.
• XANES confirmed the doping mechanism and excluded some spurious phases.

Aluminum doped Zinc Oxide thin films were deposited on standard soda-lime substrates by reactive radio frequency magnetron sputtering. Residual stress and texture were studied by X-ray diffraction, while X-ray Absorption Near Edge Spectroscopy provided information on the Al environment in the best performing thin films. The influence of deposition parameters on structural and microstructural properties is discussed. A correlation between microstructure and residual stress state with electrical and optical properties is proposed.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 605, 30 April 2016, Pages 169–172
نویسندگان
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