کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1664134 | 1518004 | 2016 | 4 صفحه PDF | دانلود رایگان |
• Al doped ZnO thin films were obtained by reactive radio frequency magnetron sputtering.
• Correlation of stresses and texture with electrical and optical properties is shown.
• Homogeneous and stress-free thin-films are the best performing ones.
• XANES confirmed the doping mechanism and excluded some spurious phases.
Aluminum doped Zinc Oxide thin films were deposited on standard soda-lime substrates by reactive radio frequency magnetron sputtering. Residual stress and texture were studied by X-ray diffraction, while X-ray Absorption Near Edge Spectroscopy provided information on the Al environment in the best performing thin films. The influence of deposition parameters on structural and microstructural properties is discussed. A correlation between microstructure and residual stress state with electrical and optical properties is proposed.
Journal: Thin Solid Films - Volume 605, 30 April 2016, Pages 169–172