کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1664179 1518009 2016 7 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Deep electron traps in HfO2-based metal-oxide-semiconductor capacitors
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
Deep electron traps in HfO2-based metal-oxide-semiconductor capacitors
چکیده انگلیسی


• We characterized deep electron trapping/detrapping in HfO2 structures.
• We modeled the experimental results through a tunneling-based model.
• We obtained an electron trap energy level of 1.59 eV below conduction band edge.
• We obtained a spatial trap distribution extending 1.7 nm within the insulator.
• A simplified tunneling front model is able to reproduce the experimental results.

Hafnium oxide (HfO2) is currently considered to be a good candidate to take part as a component in charge-trapping nonvolatile memories. In this work, the electric field and time dependences of the electron trapping/detrapping processes are studied through a constant capacitance voltage transient technique on metal-oxide-semiconductor capacitors with atomic layer deposited HfO2 as insulating layer. A tunneling-based model is proposed to reproduce the experimental results, obtaining fair agreement between experiments and simulations. From the fitting procedure, a band of defects is identified, located in the first 1.7 nm from the Si/HfO2 interface at an energy level Et = 1.59 eV below the HfO2 conduction band edge with density Nt = 1.36 × 1019 cm− 3. A simplified analytical version of the model is proposed in order to ease the fitting procedure for the low applied voltage case considered in this work.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 600, 1 February 2016, Pages 36–42
نویسندگان
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