Growth of {110}-one-axis-oriented perovskite-type oxide films using self-aligned epitaxial (101)PdO//(111) Pd double layers

• Self-aligned (101)-one-axis-oriented PdO layer were obtained on (111) Pd films
• (110)cSrRuO3 perovskite can be deposited successfully on (101) PdO//Pd double layer
• (101)cSr(Zr0.8Y0.2)O3–δ perovskite is also prepared by using (110)c SrRuO3 layer
• (101)PdO//(111)Pd is quite effective for growing {110}-oriented perovskite films

Self-aligned (101)-one-axis-oriented PdO layer was obtained on (111) Pd films prepared on (111)Pt/TiOx/SiO2/Si [abbreviated as (111)Pt/Si] substrates by the heat treatment at 750 °C under atmospheric oxygen flow. Films with (110)c-oriented SrRuO3 with perovskite structure were successfully deposited at 500 °C on a (101)-oriented PdO layer by an RF magnetron sputtering method due to their relatively small lattice mismatch.A (101)-oriented Sr(Zr0.8Y0.2)O3-δ (SZYO) film can be successfully prepared on (110)c-oriented SrRuO3 and its proton conductivity is almost the same as that of (111)c-oriented SZYO but slightly smaller than that of (111)c-oriented one. As the conductivity is strongly affected by the film crystallinity, we can conclude that the newly fabricated (110)c-oriented SZYO has almost the same crystallinity comparing to the films with other orientation.We have successfully demonstrated that the use of (101)PdO//(111)Pd double layer is a good candidate to grow {110}-one-axis-oriented perovskite thin films on Si substrates.