Influence of target power on properties of CuxO thin films prepared by reactive radio frequency magnetron sputtering

• The target power shows a decisive influence in keeping the stoichiometry of CuxO.
• The properties of CuxO films are affected by target powers.
• At 190 W, Cu2O demonstrates superior electrical properties at high growth rate.

CuxO thin films have been deposited by reactive radio frequency magnetron sputtering at different target powers Ptar (140–190 W) by fixing other process parameters: oxygen mass flow, argon mass flow and substrate temperature. Follow-up characterization (structural, electrical and optical) results reveal that the target power has a strong influence on both composition and functional properties of the resulting CuxO films and particularly, the films tend to enter a Cu-rich phase by increasing the target power. Furthermore, the films prepared at the highest power (190 W) exhibit single phase Cu2O and demonstrate superior electrical properties and high growth rate.