Transparent gallium doped zinc oxide thin-film transistors fabricated on glass substrate

• Full transparent GZO TFTs with GZO S/D electrode were fabricated.
• The GZO TFT shows a high field effect mobility of 65.57 cm2/V·s.
• The GZO TFTs were fabricated at low temperature.

High-performance transparent bottom-gate gallium-doped zinc-oxide thin-film transistors (GZO TFTs) have been fabricated on a glass substrate at a low temperature. All process temperatures were below 100 °C. For VG = − 5 to 10 V, the TFTs exhibited excellent properties such as a saturation mobility μsat of 65.57 cm2/(V·s), a linear field effect mobility μfe of 20.56 cm2/(V·s), a threshold voltage Vth of 2.2 V, a steep subthreshold swing of 166 mV/decade, a low off-state current Ioff of 5 × 10− 12 A, a high on/off current ratio of 1.5 × 107, a small contact resistance between the active layer and the S/D electrode, and a high transmittance greater than 80%. These results demonstrate that excellent device performance can be realized in GZO TFTs.