کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1664468 | 1008758 | 2015 | 9 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Wafer bowing control of free-standing heteroepitaxial diamond (100) films grown on Ir(100) substrates via patterned nucleation growth
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کلمات کلیدی
TECFWHMPNGRoom temperature - دمای اتاقChemical vapor deposition - رسوب بخار شیمیایی یا انباشت به روش تبخیر شیمیاییCVD - رسوب دهی شیمیایی بخار Thermal expansion coefficient - ضریب انبساط حرارتیMicro-Raman spectroscopy - طیف سنجی میکرو رامانfull width at half maximum - عرض کامل در نیمی از حداکثرfree-standing film - فیلم مستقل
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Wafer bowing control of free-standing heteroepitaxial diamond (100) films grown on Ir(100) substrates via patterned nucleation growth Wafer bowing control of free-standing heteroepitaxial diamond (100) films grown on Ir(100) substrates via patterned nucleation growth](/preview/png/1664468.png)
چکیده انگلیسی
The potential of patterned nucleation growth (PNG) technique to control the wafer bowing of free-standing heteroepitaxial diamond films was investigated. The heteroepitaxial diamond (100) films were grown on an Ir(100) substrate via PNG technique with different patterns of nucleation regions (NRs), which were dot-arrays with 8 or 13 μm pitch aligned to < 100 > or < 110 > direction of the Ir(100) substrate. The wafer bows and the local stress distributions of the free-standing films were measured using a confocal micro-Raman spectrometer. For each NR pattern, the stress evolutions within the early stage of diamond growth were also studied together with a scanning electron microscopic observation of the coalescing diamond particles. These investigations revealed that the NR pattern, in terms of pitch and direction of dot-array, strongly affects the compressive stress on the nucleation side of the diamond film and dominantly contributes to the elastic deformation of the free-standing film. This indicates that the PNG technique with an appropriate NR pattern is a promising solution to fabricate free-standing heteroepitaxial diamond films with extremely small bows.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 594, Part A, 2 November 2015, Pages 120-128
Journal: Thin Solid Films - Volume 594, Part A, 2 November 2015, Pages 120-128
نویسندگان
Taro Yoshikawa, Hideyuki Kodama, Shozo Kono, Kazuhiro Suzuki, Atsuhito Sawabe,