کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1664498 | 1518013 | 2015 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Effects of oxygen gas flow rates and Ga contents on structural properties of Ga-doped ZnO films prepared by ion-plating with a DC arc discharge
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Effects of oxygen gas flow rates and Ga contents on structural properties of Ga-doped ZnO films prepared by ion-plating with a DC arc discharge Effects of oxygen gas flow rates and Ga contents on structural properties of Ga-doped ZnO films prepared by ion-plating with a DC arc discharge](/preview/png/1664498.png)
چکیده انگلیسی
Structural properties of highly c-axis oriented polycrystalline Ga-doped ZnO (GZO) films prepared by ion-plating with a DC arc discharge were studied in terms of the oxygen gas flow rate (FO2) introduced into the chamber during the deposition process and the Ga2O3 content in the GZO sintered pellet. The X-ray diffraction (XRD) measurements revealed that the GZO films have the residual compressive stress along the a-axis direction (in-plane) and the tensile stress along the c-axis direction (out-of-plane). The increase in FO2 or the increase in Ga2O3 content was effective for relaxing the in-plane compressive stress induced by the so-called atomic peening effect. The positive correlation between the carrier concentration (n) and the primitive cell volume (V) would be due to the incorporation of Ga atoms substituting Zn sites (GaZns) together with the generation of n-type intrinsic defects or complex defects.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 596, 1 December 2015, Pages 24-28
Journal: Thin Solid Films - Volume 596, 1 December 2015, Pages 24-28
نویسندگان
Tomoaki Terasako, Junichi Nomoto, Hisao Makino, Naoki Yamamoto, Sho Shirakata, Tetsuya Yamamoto,