Influence of RF power on performance of sputtered a-IGZO based liquid crystal cells

• Radio-frequency power of indium gallium zinc oxide film deposition was studied.
• The oblique deposition technique was used to prepare the alignment layers.
• The liquid crystal pretilt angle was about 13° using 70 W.
• The corresponding liquid crystal cells exhibited fast response time at 4.21 ms.
• The cells showed low threshold voltage of 1.78 V and excellent contrast ratio.

The influence of radio-frequency (RF) power on sputter-deposited amorphous indium gallium zinc oxide (a-IGZO) films and the corresponding liquid crystal cell performances have been investigated. The inorganic films were used as alternative alignment layers for liquid crystal display cells. The columnar growth of film was achieved by non-contact, fixed oblique deposition using RF sputtering at the power of 50 W, 60 W and 70 W. The experiments have been carried out to compare the physical characteristics with those of the traditional polyimide (PI) alignment layers used for liquid crystal cells. The cell performances in voltage-transmittance, contrast ratio, and response time were all evaluated. The liquid crystal pretilt angle has been determined to be about 13° using 70 W power deposited a-IGZO film. It was 6° for the 60 W deposited film and only 1.5° for the PI alignment film. The experimental cell rise time and fall time was 1.25 ms and 2.96 ms, respectively. Thus, a very quick response time of 4.21 ms has been achieved. It was about 6.62 ms for the PI alignment control cell.