Cu2ZnSnSb(S,Se,Te)4 film formation from selenization of sputtered self-prepared single ceramic target

• Cu2ZnSnSb(S,Se,Te)4 thin films were deposited by sputtering single ceramic target.
• Structural and electrical properties of the films are presented.
• Properties of CZTASSeTe thin films were related to Se vaporization temperature.
• Selenized film at 600 °C presents the best crystal quality and enhanced Hall mobility.

Single-layered Cu2ZnSnSb(S,Se,Te)4(CZTASSeTe) thin films were prepared on Mo/glass substrate by radio frequency magnetron sputtering of a self-prepared single ceramic target. Successive selenization for the as-deposited film at a substrate temperature of 200 °C in Se-atmosphere was performed at various temperatures between 400 °C and 600 °C for 1 h. Structural investigation of the grown films revealed single-phase tetragonal structure corresponding to kesterite CZTSSe. All measured samples were found to exhibit p-type conductivity. An improved grain size and crystal quality with suitable atomic ratio [Cu/(Zn + Sb + Sn) = 0.89, Zn/Sn = 1.15, and metal/(S + Se + Te) = 1.02] obtained for CZTASSeTe film selenized at 600 °C. The Hall concentration increased from 1.06 to 5.8 × 1017 cm− 3, mobility increased from 2.82 to 44.3 cm2 V− 1 s− 1, and resistivity decreased from 20.92 to 0.24 Ω cm as the precursor film is selenized to 600 °C. An enhanced Hall mobility can be ascribed to the larger grains with better crystallinity and composition in the selenized film at 600 °C. Our large grain size and maximized mobility for CZTASSeTe film at the selenization temperature of 600 °C from single ceramic target can be useful for the fabrication of the CZTASSeTe absorber layer.